Formation of InGaSa p-n Junction by control of growth temperatur

Details Formation of InGaSa p-n Junction by control of growth temperatur Formation of InGaSa p-n Junction by control of growth temperatur

1996-09-16

1999-01-12

Bowers, Charles

Semiconductor device manufacturing: process

Making regenerative-type switching device

145DIG65, 145DIG72, 145DIG110, 145DIG160, 438312, 438191, 438357, H01L 21203

Patent

active

058588183

ABSTRACT:
An epitaxial growth method for a compound semiconductor thin film, capable of forming a p-n junction with an atomic-scale ultra-micro structure is disclosed. The method involves loading the compound semiconductor substrate in a reaction chamber, injecting Group V and III metal organic source gases not processed by a thermal pre-decomposition process into the reaction chamber, and growing a p- or n-type compound semiconductor on the compound semiconductor substrate while adjusting the growth temperature of the p- or n-type compound semiconductor.

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patent: 4533410 (1985-08-01), Ogura et al.
patent: 4829022 (1989-05-01), Kobayashi et al.
patent: 5332451 (1994-07-01), Hata et al.
patent: 5458689 (1995-10-01), Saito
patent: 5578521 (1996-11-01), Suzuki et al.

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