Guard ring extension to prevent reliability failures

Details Guard ring extension to prevent reliability failures Guard ring extension to prevent reliability failures

2011-07-05

2011-07-05

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

C438S639000, C438S694000, C148SDIG070, C257SE21577

Reexamination Certificate

active

07972909

ABSTRACT:
An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal layer. A passivation layer is etched at bottom of the trench. A capping layer is deposited on the trench over the etched passivation layer. The capping layer and the top metal layer form a mechanical strong interface to prevent a crack propagation.

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