Gated-thyristor approach having angle-implanted base region

Details Gated-thyristor approach having angle-implanted base region Gated-thyristor approach having angle-implanted base region

2006-05-02

2006-05-02

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Reexamination Certificate

active

07037763

ABSTRACT:
In an example gated-thyristor circuit, formation of thyristor body regions involves an angled implant of a thyristor body region, such as a base region, to mitigate capacitive coupling of a gated voltage pulse from the thyristor gate to a body region that is not underlying the thyristor gate. According to a more particular example embodiment, such a thyristor switches between a current-passing mode and a current blocking mode in response to at least one voltage pulse coupling to an underlying thyristor base region. Using a first ion type to provide one polarity, an immediately-adjacent thyristor base region is angle implanted through an emitter body region that is located to other side of the adjacent thyristor base region. The emitter body region is then implanted using ions of another ion type to provide the opposite polarity. This angle implantation permits definition of the adjacent thyristor base region sufficiently distant from (e.g., underlapping) the gate to mitigate gate-induced leakage to the second body region and the associated junction leakage between thyristor base regions. Applications include a variety of circuits benefiting from fast-switching and/or small-architecture features; example applications include thyristor-based latches and memory cells and power thyristor circuits.

REFERENCES:
patent: 6767770 (2004-07-01), Horch et al.
patent: 6828176 (2004-12-01), Nemati et al.
patent: 6828202 (2004-12-01), Horch

Affiliated with

Also associated with

Rating

Gated-thyristor approach having angle-implanted base region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gated-thyristor approach having angle-implanted base region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gated-thyristor approach having angle-implanted base region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3609765