Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2008-12-05
2011-11-01
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C257S192000, C257SE21190
Reexamination Certificate
active
08048723
ABSTRACT:
A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fine. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin.
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Chang Cheng-Hung
Hsu Yu-Rung
Hung Shih-Ting
Lee Chen-Yi
Yeh Chen-Nan
Kebede Brook
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Tony
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