Forming of the periphery of a schottky diode with MOS trenches

Details Forming of the periphery of a schottky diode with MOS trenches Forming of the periphery of a schottky diode with MOS trenches

2007-03-02

2010-10-26

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S237000, C257SE21359

Reexamination Certificate

active

07820494

ABSTRACT:
A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, including the steps of depositing on a semiconductor substrate a thick layer of a first insulating material and a thin layer of a second material; simultaneously digging a peripheral trench and the trenches of the component; isotropically etching the first material so that a cap overhanging a recess remains; forming a thin insulating layer; and filling the trenches and said recess with a conductive material.

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French Search Report from French Patent Application 03/51110, filed Dec. 18, 2003.
Mehrotra M. et al.: “The Trench MOS Barrier Schottky (TMBS) rectifier” Electron Devices Meeting, 1993. Technical Digest., International Washington, DC, USA Dec. 5-8, 1993, New York, NY, USA, IEEE, Dec. 5, 1993, pp. 675-678, XP010118313 ISBN: 0-7803-1450-6.

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