High voltage power MOS device

Details High voltage power MOS device High voltage power MOS device

1996-09-04

1998-12-22

Dutton, Brian

Semiconductor device manufacturing: process

Making regenerative-type switching device

Bidirectional rectifier with control electrode

438135, H01L 21332

Patent

active

058518576

ABSTRACT:
A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the front side, a second region within the first region, the semiconductor substrate, and at least one island region adjacent the backside. The switching device also includes a second transistor which includes the first region, the second region, the semiconductor substrate, and a third region coupled to the at least one island region.

REFERENCES:
patent: 4066484 (1978-01-01), Moyson
patent: 4564855 (1986-01-01), Van Zanten
patent: 5171696 (1992-12-01), Hagino
Baliga, B. Jayant, et al., "The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device," IEEE Transactions on Electron Devices (Jun. 1984) ED-31(6):821-828.
Chow, T. P., et al., "Comparison of 300-, 600-, and 1200-V n-Channel Insulated Gate Transistors," IEEE Electron Device Letters (Apr. 1985) EDL-6(4):161-163.

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