LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

II-VI compound semiconductor based light emitting device having

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

II-VI compound semiconductor crystal

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

II-VI compound semiconductor crystal and photoelectric...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

II-VI compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

II-VI compound semiconductor device with III-V buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

II-VI group compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

II-VI group compound semiconductor device metallic nitride ohmic

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

II-VI laser diodes with short-period strained-layer superlattice

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

II-VI semiconductor device with BeTe buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

II-VI semiconductor device with BeTe buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

II-VI/III-V layered construction on InP substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

II-VI/III-V layered construction on InP substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

II/VI-compound semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

III group nitride compound semiconductor luminescent element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

III group nitride system compound semiconductor light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

III group nitride system compound semiconductor light...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

III group nitride system compound semiconductor light...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

III nitride compound semiconductor element an electrode...

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound

III nitride epitaxial substrate, epitaxial substrate for III...