II-VI group compound semiconductor device

Details II-VI group compound semiconductor device II-VI group compound semiconductor device

1996-11-25

1998-06-16

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257103, 257743, 257744, 257201, 257614, H01L 3300

Patent

active

057675368

ABSTRACT:
A II-VI group compound semiconductor device comprising a Zn.sub.X Mg.sub.1-X S.sub.Y Se.sub.1-Y (0.ltoreq.X.ltoreq.1, 0.ltoreq.Y.ltoreq.1) semiconductor layer, an intermediate layer comprising a compound of an element constituting the semiconductor layer and an additive element of Cd, Te or Hg formed on the semiconductor layer, and an electrode layer containing Ni, Pt or Pd formed on the intermediate layer.

REFERENCES:
patent: 5373175 (1994-12-01), Ozawa et al.
Ohtsuka, T., et al. "Growth and Characterization of p-type CdSe," Preliminary Drafts of Lecture, (1993), vol. 1, (presented at the 54th Conference on Applied Physics, Scientific Lecture Meeting) (English translation attached).
Jeon, H., et al. "Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells," Appl. Phys. Lett., (1991), 59(27):3619-21.
Haase, M.A., et al. "Blue-green laser diodes," Appl. Phys. Lett., (1991), 59(11):1272-74.
Haase, M. et al. "Short wavelength II-VI laser diodes," Inst. Phys. Conf. Ser., (1991), No. 120: Chap. 1, pp. 9-16 (paper presented at Int. Symp. GaAs and Related Compounds, Seattle).
Lansari, Y., et al. Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures, Appl. Phys. Lett., (1992), 61(21):2554-56.
Fan, Y., et al., "Graded band gap ohmic contact to p-ZnSe," Appl. Phys. Lett., (1992), 61(26):3160-62.
Hiei, F., et al. "Ohmic contacts to p-type ZnSe using ZnTe/ZnSe multiquantum wells," Electronic Letters, (1993), 29(10):878-79.

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