II-VI laser diodes with short-period strained-layer superlattice

Details II-VI laser diodes with short-period strained-layer superlattice II-VI laser diodes with short-period strained-layer superlattice

1995-01-31

2000-05-02

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 15, 257 14, H01L 3300, H01L 2906, H01L 310328, H01L 310336

Patent

active

06057559&

ABSTRACT:
A laser diode for emitting a coherent beam of light in the blue and/or green portions of the spectrum. The laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first light-guiding layer. A short-period strained-layer superlattice (SPSLS) CdZnSe quantum well active layer is positioned within the pn junction. The layers of II-VI semiconductor are supported by a substrate. First and second electrodes on opposite sides of the layers of II-VI semiconductor couple electrical energy to the laser diode.

REFERENCES:
patent: 4261771 (1981-04-01), Dingle
patent: 5045897 (1991-09-01), Ahlgren
patent: 5068867 (1991-11-01), Hasenberg
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