III group nitride compound semiconductor luminescent element

Details III group nitride compound semiconductor luminescent element III group nitride compound semiconductor luminescent element

2006-04-18

2006-04-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S094000, C257S096000, C257S099000, C257S103000, C257S918000

Reexamination Certificate

active

07030414

ABSTRACT:
A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well layer and the film thickness of the AlGaN layer as the barrier layer are controlled to be optimized to thereby improve an output of the light-emitting device.

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