II-VI compound semiconductor device with III-V buffer layer

Details II-VI compound semiconductor device with III-V buffer layer II-VI compound semiconductor device with III-V buffer layer

1997-09-24

2000-06-06

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257200, 257 13, 257 15, 257 97, H01L 3300

Patent

active

060722029

ABSTRACT:
A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer and made of III-V compound semiconductor including In element as a constituent element thereof. The thickness of the first layer is less than the critical thickness allowing coherent growth. Alternatively, the III-V compound of the first layer has a lattice constant substantially equal to the lattice constant of the GaAs substrate. The first layer may be a superlattice layer.

REFERENCES:
patent: 5481558 (1996-01-01), Ikeda et al.
patent: 5488233 (1996-01-01), Ishikawa et al.
patent: 5539239 (1996-07-01), Kawazu et al.
Matthews et al, Defects in Epitaxial Multilayers, Journal of Crystal Growth 27, (1974) pp. 118-125.
Wu et al, Molecular Beam Epitaxy of Low Defect Density . . . , Appl. Phys. Lett. 68 (20), May 13, 1996, pp. 2828-2830.
Hua et al, Microstructure Study of a Degraded Pseudomorphic Separate Confinement Heterostructure Blue-Green Laser Diode, Appl. Phys. Lett. 65 (11), Sep. 12, 1994, pp. 1331-1333.

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