Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-07-12
2005-07-12
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S103000, C257S622000
Reexamination Certificate
active
06917059
ABSTRACT:
A III group nitride system compound semiconductor light emitting element has: a transparent substrate with a concave portion on the surface; a filling material that is embedded in the concave portion; and a III group nitride system compound semiconductor layer that is formed on the surface of the transparent substrate. The filling material has a refractive index substantially equal to that of the III group nitride system compound semiconductor layer or closer to that of the III group nitride system compound semiconductor layer than that of the transparent substrate.
REFERENCES:
patent: 6376866 (2002-04-01), Shakuda
patent: 2001-267242 (2001-09-01), None
Kazuyuki Tadatomo, et al., “High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy”, Japanese Journal Appl. Phys. vol. 40., Part 2, No. 6B, Jun. 15, 2001, pp. L583-585.
Nguyen Thinh T
Toyoda Gosei Co,., Ltd.
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