III nitride epitaxial substrate, epitaxial substrate for III...

Details III nitride epitaxial substrate, epitaxial substrate for III... III nitride epitaxial substrate, epitaxial substrate for III...

2005-01-18

2005-01-18

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257S628000

Reexamination Certificate

active

06844611

ABSTRACT:
The crystal orientation of the main surface of a sapphire single crystal base material to constitute an epitaxial substrate is inclined from the <0001> orientation (c-axis) preferably for the <1-100> orientation (m-axis) by a range within 0.02-0.3 degrees. Then, a surface nitride layer is formed at the main surface of the base material. Then, a III nitride underfilm is formed on the main surface of the base material via the surface nitride layer. The III nitride underfilm includes at least Al element, and the full width at half maximum at (101-2) reflection in X-ray rocking curve of the III nitride underfilm is 2000 seconds. The surface roughness Ra within 5 μm area is 3.5 Å.

REFERENCES:
patent: 6252255 (2001-06-01), Ueta et al.
patent: 6265089 (2001-07-01), Fatemi et al.
patent: 6593016 (2003-07-01), Chiyo et al.
patent: 6635904 (2003-10-01), Goetz et al.
patent: 2000082676 (2000-03-01), None
patent: 2002176196 (2002-06-01), None

Affiliated with

Also associated with

Rating

III nitride epitaxial substrate, epitaxial substrate for III... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III nitride epitaxial substrate, epitaxial substrate for III..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III nitride epitaxial substrate, epitaxial substrate for III... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3435194