II-VI compound semiconductor based light emitting device having

Details II-VI compound semiconductor based light emitting device having II-VI compound semiconductor based light emitting device having

1997-09-25

2000-06-20

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 86, 257 87, 257190, 257201, H01L 3300

Patent

active

060780622

ABSTRACT:
Provided by the present invention is a II-VI compound semiconductor based light emitting device which is suppressed in the propagation velocity of crystal defects at the time of current application, has a prolonged lifetime and can be readily mass produced. The device has a recombination region and non-recombination region of carriers which have been separated spatially each other in the plane of the active layer.

REFERENCES:
patent: 4148045 (1979-04-01), Fang et al.
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4868614 (1989-09-01), Yamazaki
patent: 5057880 (1991-10-01), Eshita et al.
patent: 5091767 (1992-02-01), Bean et al.
patent: 5216261 (1993-06-01), Inata et al.
patent: 5389800 (1995-02-01), Itaya et al.
patent: 5477063 (1995-12-01), Shakuda
patent: 5483547 (1996-01-01), Adams et al.
patent: 5610413 (1997-03-01), Fan et al.
patent: 5732099 (1998-03-01), Kawasumi et al.
patent: 5751013 (1998-05-01), Kidoguchi et al.
patent: 5751014 (1998-05-01), Nakatsu et al.
Kimura et al., "Structural Study of Zn/S/ZnSe Strained Layer Superlattice Grown by Molecular Beam Epitaxy," Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International, pp. 183-186.
S. Guha et al., "Degradation of II-VI based blue-green light emitters", Appl. Phys. Lett., vol. 63, No. 23, Dec. 6, 1993, pp. 3107-3109.
S. Guha et al., "<100> dark line defect in II-VI blue-green light emitters", Appl. Phys. Lett., vol. 65, No. 7, Aug. 15, 1994, pp. 801-803.
L.H. Kuo et al., "Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs", Appl. Phys. Lett., vol. 68, No. 17, Apr. 22, 1996, pp. 2413-2415.
S. Taniguchi et al., "100h II-VI blue-green laser diode", Electronics Letters, Mar. 14, 1996, vol. 32, No. 6, pp. 552-553.

Affiliated with

Also associated with

Rating

II-VI compound semiconductor based light emitting device having does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with II-VI compound semiconductor based light emitting device having , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and II-VI compound semiconductor based light emitting device having will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1855300