Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-03-23
1996-12-24
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257 78, 257 99, 257741, 257761, 257762, 257763, 257766, 257769, 257770, H01L 2945, H01L 2943, H01L 2348
Patent
active
055876099
ABSTRACT:
A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.
REFERENCES:
Jeon, H., et al. "Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells," Appl. Phys. Lett. (1991) 59(27):3619-21.
Ohtsuka, T., et al. "Growth and Characterization of p-type CdSe," Preliminary Drafts of Lecture (1993) vol. 1, (presented at the 54th Conference on Applied Physics, Scientific Lecture Meeting) (English translation attached).
Haase, M. A., et al. "Blue-green laser diodes," Appl. Phys. Lett. (1991) 59(11):1272-74.
Haase, M. et al. "Short wavelength II-VI laser diodes," Inst. Phys. Conf. Ser. (1991) No. 120: Chap. 1, pp. 9-16 (paper presented at Int. Symp. GaAs and Related Compounds, Seattle).
Lansari, Y., et al. "Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures," Appl. Phys. Lett. (1992) 61(21):2554-56.
Hiei, F., et al. "Ohmic contacts to p-type ZnSe using ZnTe/ZnSe multiquantum wells," Electronic Letters (1993) 29(10):878-79.
Fan, Y., et al. "Graded band gap ohmic contact to p-ZnSe," Appl. Phys. Lett. (1992) 61(26):3160-62.
Koide Yasuo
Murakami Masanori
Teraguchi Nobuaki
Tomomura Yoshitaka
Saadat Mahshid
Sharp Kabushiki Kaisha
Tang Alice W.
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