III group nitride system compound semiconductor light...

Details III group nitride system compound semiconductor light... III group nitride system compound semiconductor light...

2005-03-08

2005-03-08

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S088000, C257S090000

Reexamination Certificate

active

06864502

ABSTRACT:
A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of AlX1GaY1In1-X1-Y1N, where 0<X1, 0≦Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1-X2-Y2N, where 0<X2, 0≦Y2 and X2+Y2<1. The Al composition (X2) of barrier layer is equal to or smaller than that (X1) of well layer.

REFERENCES:
patent: 6541797 (2003-04-01), Udagawa
patent: 6727518 (2004-04-01), Uemura et al.
patent: 6791120 (2004-09-01), Toda et al.
patent: 2000-294884 (2000-10-01), None
Hideki Hirayama, et al., “300 nm band high intensity ultraviolet LED using four element mixed crystal InAlGaN”, Monthly Display Aug. 2001 Separate Volume, , Aug. 2001.

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