II/VI-compound semiconductor light emitting device

Details II/VI-compound semiconductor light emitting device II/VI-compound semiconductor light emitting device

1995-04-27

1996-10-22

Davie, James W.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257101, 257102, 372 45, 372 46, H01L 3300, H01S 319

Patent

active

055679609

ABSTRACT:
A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.

REFERENCES:
patent: 5268918 (1993-12-01), Akimoto et al.
patent: 5291507 (1994-03-01), Haase et al.
patent: 5371756 (1994-12-01), Fujii
patent: 5373521 (1994-12-01), Takahashi
patent: 5394422 (1995-02-01), Fitzpatrick
patent: 5420446 (1995-05-01), Narui et al.
patent: 5471067 (1995-11-01), Ikeda et al.
Structural characterization of II-VI Separate Confinement Heterostructure lasers etc.-931 Journal of Applied Physics 75 (1994 1 Jan., No. 1 pp. 63-67.
Electronics Letters 31st Mar. 1994 vol. 30, No. 7--Nakayama et al pp. 568-570.
320 Applied Physics Letters 62(1993) 17 May, No. 20, New York--Gaines et al pp. 2462-2464.
Electronics Letters 3rd Mar. 1994 vol. 30 No. 5 Room temperature pulsed operation of blue laser diodes--Okuyama et al, pp. 415-416.
Electronics Letters 29th Apr. 1993 vol. 29, No. 9--Itoh et al pp. 766-768.

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