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Selected: G

GaN system semiconductor light emitting device excellent in...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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GaN type semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
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GaN-based composition semiconductor light-emitting element...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
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GaN-based compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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GaN-based compound semiconductor EPI-wafer and semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
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GaN-based device cascoded with an integrated FET/Schottky...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
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Gan-based field effect transistor and production method...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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GaN-based field effect transistor of a normally-off type

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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GaN-based heterostructure photodiode

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
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GaN-based HFET having a surface-leakage reducing cap layer

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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GaN-based high electron mobility transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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GaN-based high electron mobility transistor (HEMT) with an...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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GaN-based III—V group compound semiconductor device...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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GaN-based nitric oxide sensors and methods of making and...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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GaN-based semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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GaN-based semiconductor junction structure

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
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GaN-based semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
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GaN-based semiconductor light-emitting device and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
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GaN-based semiconductor light-emitting element,...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
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GaN-type enhancement MOSFET using hetero structure

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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