GaN-based semiconductor light-emitting element,...

Details GaN-based semiconductor light-emitting element,... GaN-based semiconductor light-emitting element,...

2011-04-19

2011-04-19

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257SE33023, C257SE21158, C438S047000

Reexamination Certificate

active

07928452

ABSTRACT:
A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

REFERENCES:
patent: 2006/0249736 (2006-11-01), Lee et al.
patent: 2009/0166606 (2009-07-01), Lee
patent: 09-129926 (1997-05-01), None
patent: 11-054796 (1999-02-01), None
patent: 2002-270971 (2002-09-01), None
patent: 2002-344015 (2002-11-01), None
patent: 2004-112002 (2004-04-01), None
patent: 2003-204078 (2004-07-01), None
patent: 2004-343147 (2004-12-01), None
patent: 2007-080996 (2007-03-01), None
patent: 2008-526014 (2008-07-01), None
patent: 2006-068376 (2006-06-01), None
Japanese Office Action (JP 2008-066595) dated Dec. 22, 2009.
Kumakura, K. et al., “Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices,” Jpn. J. Appl. Phys., vol. 38, pp. L1012-L1014, 1999.
Kozodoy, P. et al., “Enhanced Mg Doping efficiency in Al0.2Ga0.8N/GaN superlattices,” Applied Physics Letters, vol. 74, pp. 3681-3683, 1999.
Kozodoy, P. et al., “Polarization-enhanced Mg doping of AlGaN/GaN superlattices,” Applied Physics Letters, vol. 75, pp. 2444-2446, 1999.

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