GaN-type enhancement MOSFET using hetero structure

Details GaN-type enhancement MOSFET using hetero structure GaN-type enhancement MOSFET using hetero structure

2005-07-05

2005-07-05

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000

Reexamination Certificate

active

06914273

ABSTRACT:
A GaN based enhancement mode MOSFET includes a GaN layer and a (Group III)xGa1−xN layer, such as an AlxGa1−xN disposed on the GaN layer. The thickness of the AlxGa1−xN layer is less than 20 nm to provide a negligible sheet carrier concentration in the GaN layer along its interface with AlxGa1−xN. A source and a drain region extend through the AlxGa1−xN layer into the GaN layer, the source and drain region separated by a channel region. A gate dielectric is disposed over the channel region. A gate electrode is disposed on the gate dielectric. The MOSFET formed is a true enhancement MOSFET which is in an off state when the gate is unbiased.

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