Gan-based field effect transistor and production method...

Details Gan-based field effect transistor and production method... Gan-based field effect transistor and production method...

2005-08-26

2009-06-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C267S024000, C267S192000, C267S194000, C267S251000

Reexamination Certificate

active

07547911

ABSTRACT:
A GaN-based heterostructure field effect transistor capable of accomplishing higher output, higher breakdown voltage, higher speed, higher frequency, and the like. A heterostructure field effect transistor including a channel layer (4) of GaN and a barrier layer (6) of AlGaN, wherein the surface of a transistor element has an insulating film (10).

REFERENCES:
patent: 2007/0254418 (2007-11-01), Sheppard et al.
patent: 2003-59948 (2003-02-01), None
International Search Report for PCT/JP2006/016065 mailed Dec. 6, 2005 (1 page).

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