GaN-based field effect transistor of a normally-off type

Details GaN-based field effect transistor of a normally-off type GaN-based field effect transistor of a normally-off type

2006-05-02

2006-05-02

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S201000, C257S189000, C257S188000, C257S207000, C257S194000, C257S190000, C257S195000

Reexamination Certificate

active

07038253

ABSTRACT:
According to the present invention, there is provided a new GaN-based field effect transistor of a normally-off type, which has an extremely small ON resistance during operation and is capable of a large-current operation. The GaN-based field effect transistor according to the present invention comprises source and drain electrodes; a channel portion made of a first GaN-based semiconducting material that is an i-GaN-based semiconducting material or a p-GaN-based semiconducting material, the channel portion being so formed as to be electrically connected to the source and drain electrodes; first and second electron supply portions made of a second GaN-based semiconducting material having greater bandgap energy than the first GaN-based semiconducting material, the first and second electron supply portions being joined to the channel portion and located separately from each other; an insulating layer formed on the surface of the channel portion, which spreads between the first and second electron supply portions; and a gate electrode disposed on the insulating layer.

REFERENCES:
patent: 4737827 (1988-04-01), Ohta
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6281528 (2001-08-01), Wada
patent: 1134810 (2001-09-01), None
patent: 61-234569 (1986-10-01), None
patent: 4-127569 (1992-04-01), None

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