GaN-based heterostructure photodiode

Details GaN-based heterostructure photodiode GaN-based heterostructure photodiode

2005-07-05

2005-07-05

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S184000, C257S190000, C257S079000, C257S099000, C257S094000, C257S103000

Reexamination Certificate

active

06914315

ABSTRACT:
The present invention relates to a GaN-based heterostructure photodiode comprising a P type layer, an N type layer, and an activity layer between the P type layer and the N type layer. The P type layer, the N type layer and the activity layer are made of GaN-based composition, and the activity layer is doped with borons so as to modulate the band gap between the P type layer and the N type layer. Therefore, the breakdown voltage can be increased and the light receiving ability can be promoted so that the photodiode to be a light receiving element can has a better performance for light detection.

REFERENCES:
patent: 6667498 (2003-12-01), Makimoto et al.
patent: 6674097 (2004-01-01), Komoto et al.

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