Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-03-27
2007-03-27
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000, C257S096000, C257S097000, C257S101000, C257S102000, C257S103000
Reexamination Certificate
active
10763137
ABSTRACT:
Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO electrode film and a p type GaN system semiconductor layer, thus resulting in a not uniform flow of an electric current. It is an object of the present invention to provide a semiconductor light emitting device constituted by forming a transparent electrode, which facilitates acquiring an ohmic property, to be replaced by an ITO electrode film, at the light extracting or light exit side of the GaN system semiconductor light emitting device, so as to improve a light emission efficiency and a radiation extracting efficiency or a light exit efficiency of a GaN system semiconductor light emitting device. In order to accomplish the above mentioned object, the present invention provides a semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between an n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a Ga-doped MgzZn1-zO (0≦<1) electrode film.
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Mathew, J., et al., “p-Type Electrical Conduction in Zn0 Thin Films by Ga and N Codoping”, Jpn. J. Appl. Phys., 1999 vol. 38, No. 11A, pp. L1205-L1207 (not enclosed).
Hogan & Hartson LLP.
Rohm & Co., Ltd.
Soward Ida M.
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