Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-02-16
2010-10-26
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S094000, C257S097000, C257SE33003, C257SE33025, C438S024000, C438S046000, C438S047000
Reexamination Certificate
active
07821018
ABSTRACT:
A GaN-based semiconductor light-emitting device1includes a stacked body10A having the component layers12that include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layer14made of metal and a second bonding layer33formed on an electroconductive substrate31, adapted to have bonded to the first bonding layer14the surface thereof lying opposite the side on which the electroconductive substrate31is formed, made of a metal of the same crystal structure as the first bonding layer14, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.
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Hodota Takashi
Osawa Hiroshi
Lee Hsien-ming
Showa Denko K.K.
Sughrue & Mion, PLLC
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