GaN-based semiconductor junction structure

Details GaN-based semiconductor junction structure GaN-based semiconductor junction structure

2007-07-17

2007-07-17

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S102000, C257S103000

Reexamination Certificate

active

10559256

ABSTRACT:
The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P++-Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer and a N++-Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.

REFERENCES:
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patent: RE38805 (2005-10-01), Ohba et al.
patent: 7119271 (2006-10-01), King et al.
J.J. Wierer, etc, “Buried tunnel contact junction AIGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral current”, Oct. 1997, Appl. Phys. Lett. 71(16), pp. 2286-2288.
T.A. Richard, etc , “High current density carbon-doped strained-layer GaAs(P+)- InGaAs(n+)-GaAs(n+) p-n tunnel diodes.”, Dec. 1993, Appl. Phys. Lett, 63(26).
Seong-Ran Jeon, etc., “Lateral current spreading in GaN-based LED utilizing tunnel contact junctions”, May 21, 2001., Appl. Phys. Lett. vol. 78, 21, 3265-3267.
Chih-Hsin Ko, etc, “P-dwon InGaN/GaN Multiple Quantum Wells Light emitting diode structure grown by metal-organic vapor phase epitaxy”, Jpn. J. Appl. Phys. vol. 41, Apr. 2002, pp. 2489-2492.

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