LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,With means to control surface effects,With inversion-preventing shield electrode

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Dopant implant for conductive charge leakage layer for use with

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Electrostatic discharge (ESD) protection structure

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Field shield isolated transistor

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

High voltage integrated circuit, high voltage junction terminati

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

High voltage integrated circuit, high voltage junction...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

High voltage planar edge termination structure and method of mak

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

MOSFET-based electrostatic discharge (ESD) protection...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

MOSgated device termination with guard rings under field plate

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Planar semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Power semiconductor devices having overlapping floating field pl

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Semiconductor device and a method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Semiconductor device and process for the same

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Semiconductor device having CMOS transistors

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Semiconductor device having field-shield isolation structures an

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Semiconductor device having planar junction

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Semiconductor device in which a peripheral potential barrier is

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Semiconductor device with metal peripheral area

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Tapered dielectric microelectronic structures and associated met

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode

Termination structure for high voltage devices