Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode
Patent
1996-04-12
2000-09-26
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
With inversion-preventing shield electrode
257648, 257354, H01L 2978, H01L 3300
Patent
active
06124628&
ABSTRACT:
A high voltage integrated circuit is provided that includes a first region of first conductivity type; a second region of second conductivity type formed in a first major surface of the first region; a third region of first conductivity type formed in a selected area of a surface of the second region; first source region and first drain region of the first conductivity type formed in the second region, apart from the third region; a first gate electrode formed on a surface of the second region between the first source region and first drain region, through an insulating film; second source region and second drain region of second conductivity type formed in a surface of the third region; and a second gate electrode formed on a surface of the third region between the second source region and the second drain region, through an insulating film.
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Fujihira Tatsuhiko
Kumagai Naoki
Obinata Shigeyuki
Yano Yukio
Fuji Electric & Co., Ltd.
Meier Stephen D.
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