Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode
Patent
1996-06-06
1999-05-25
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
With inversion-preventing shield electrode
438713, H01L 2358
Patent
active
059071818
ABSTRACT:
A diode includes a semiconductor substrate of first conductivity type and including a surface having a doped portion of second conductivity type opposite the first conductivity type. In addition, a dielectric layer on the surface of the substrate extends over a first portion of the doped surface portion and leaves a second portion of the doped surface portion exposed. This dielectric layer includes a low-angle tapered portion having a thickness which increases as said tapered portion extends from the exposed doped surface portion of the substrate. In particular, the low-angle tapered portion of the dielectric layer may extend from the exposed portion of a surface at an angle of less than about 10.degree.. Furthermore, the diode may also include a conductive contact on the exposed portion of the substrate and a field plate extending from the conductive contact over a portion of the dielectric layer.
REFERENCES:
patent: 4030952 (1977-06-01), Luce et al.
patent: 4814041 (1989-03-01), Auda
patent: 5424571 (1995-06-01), Liou
patent: 5548149 (1996-08-01), Joyner
patent: 5585658 (1996-12-01), Muhai et al.
Choi Yearn-Ik
Han Min-Koo
Kim Han-soo
Kim Seong-dong
Prenty Mark V.
Samsung Electronics Co,. Ltd.
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