Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode
Patent
1997-12-05
2000-05-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
With inversion-preventing shield electrode
257202, 257211, 257488, 257659, H01L 2358
Patent
active
060607645
ABSTRACT:
A field shield isolated transistor is provided wherein the left-hand edge (E1) of a left-hand contact pad (51a) is positioned a distance (d5) to the right of the left-hand edge (F1) of a left-hand field shield gate electrode (41); the right-hand edge (E2) of the left-hand contact pad (51a) is positioned a distance (d6) to the right of the right-hand edge (F2) of the left-hand field shield gate electrode (41); the left-hand edge (E3) of a right-hand contact pad (52a) is positioned a distance (d7) to the left of the left-hand edge (F3) of a right-hand field shield gate electrode (42); and the right-hand edge (E4) of the right-hand contact pad (52a) is positioned a distance (d8) to the left of the right-hand edge (F4) of the right-hand field shield gate electrode (42). The right-hand edge (E2) of the left-hand contact pad (51a) and the left-hand edge (E3) of the right-hand contact pad (52a) which are positioned closer to diffusion layers (21-23) reduce the size of the MOS transistor, achieving the effective use of the area thereof.
REFERENCES:
patent: 4949157 (1990-08-01), Minami
patent: 5404034 (1995-04-01), Yin
"CAD-Compatible High-Speed CMOS/SIMOX Technology Using Field-Shield Isolation for 1M Gate Array", T. Iwamatsu et al., Proc IEEE IEDM, 1993, pp. 475-478.
High-Speed 0.5Mu m SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications, T. Iwamatsu et al., Extended Abstracts of the 1995 International conference on Solid State Devices and Materials, Osaka, 1995, pp. 575-577.
"Suppression of Delay Time Instability on Frequency using Field Shield Isolation Technology for Deep Sub-Micron SOI Circuits", S. Maeda et al., Proc IEEE IEDM, 1996, pp. 129-131.
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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