Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – With inversion-preventing shield electrode
Reexamination Certificate
2007-11-02
2009-08-18
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
With inversion-preventing shield electrode
C257SE23013, C257SE21510, C438S121000
Reexamination Certificate
active
07576414
ABSTRACT:
A semiconductor device has a substrate with a plurality of active devices formed thereon. A contact pad is formed on the substrate. A solder bump is formed on the contact pad. An electrostatic discharge (ESD) bump electrode is formed on the contact pad. The ESD bump electrode has a tip. The ESD bump electrode is made with gold. A chip carrier substrate has a contact pad metallurgically connected to the solder bump. The chip carrier substrate also has a ground plate. The ground plate is a low impedance ground point. The tip of the ESD bump electrode is separated from the ground plate by a distance according to ESD sensitivity of the active devices. The distance is determined by a ratio of a discharging threshold voltage for ESD sensitivity of the active device to be protected to an atmosphere discharging voltage.
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patent: 5818101 (1998-10-01), Schuster
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patent: 6686649 (2004-02-01), Mathews et al.
patent: 7196406 (2007-03-01), Kuzmenka
patent: 2007/0187822 (2007-08-01), Chen et al.
Chow Seng Guan
Huang Rui
Lin Yaojian
Atkins Robert D.
Coleman W. David
STATS ChipPAC Ltd.
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