LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,Incoherent light emitter structure

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor

Gallium arsenide phosphide epitaxial wafer and light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Gallium nitride (GaN)-based semiconductor light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Gallium nitride based compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Gallium nitride based compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Gallium nitride based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Gallium nitride based III-V group compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Gallium nitride based light emitting device and the...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Gallium nitride based light emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Gallium nitride based light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Gallium nitride based light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Gallium nitride based semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Gallium nitride compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Gallium nitride compound semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Gallium nitride compound-based semiconductor light emitting devi

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Gallium nitride crystal and method of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Gallium nitride crystals and wafers and method of making

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Gallium nitride doped with rare earth ions and method and struct

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

Gallium nitride group compound semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Gallium nitride group compound semiconductor light-emitting devi