Gallium nitride doped with rare earth ions and method and struct

Details Gallium nitride doped with rare earth ions and method and struct Gallium nitride doped with rare earth ions and method and struct

1999-02-20

2000-10-31

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

H01L 3300

Patent

active

061406694

ABSTRACT:
The present invention is a GaN semiconductor crystal that is doped with at least one RE ion, wherein the structure has been annealed at a temperature of at least about 1,000 degrees Celsius. As a result, the structure of structure is preferably adapted to provide a luminescence spectra over the range from about 380 nanometers to about 1000 nanometers when excited by a suitable excitation. The present invention also includes apparatus and methods for producing cathodoluminesence and electroluminesence that may be suitable for use in any of a wide variety of optoelectronic devices.

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