Gallium nitride crystal and method of making same

Details Gallium nitride crystal and method of making same Gallium nitride crystal and method of making same

2006-08-29

2006-08-29

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S022000, C257S064000, C257S613000

Reexamination Certificate

active

07098487

ABSTRACT:
There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 104cm−1, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

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