Gallium nitride based light emitting device and the...

Details Gallium nitride based light emitting device and the... Gallium nitride based light emitting device and the...

2006-10-10

2006-10-10

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S088000, C257S098000

Reexamination Certificate

active

07119374

ABSTRACT:
A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

REFERENCES:
patent: 6194742 (2001-02-01), Kern et al.
patent: 6521999 (2003-02-01), Uemura et al.
patent: 6563139 (2003-05-01), Hen
patent: 419837 (2001-01-01), None
patent: 558848 (2003-10-01), None

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