Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-07-18
2006-07-18
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S103000
Reexamination Certificate
active
07078731
ABSTRACT:
A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104cm−2, and is substantially free of tilt boundaries.
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Yoshinobu Ono et al
Arthur Stephen Daley
D'Evelyn Mark Philip
Hong Huicong
LeBoeuf Steven Francis
Narang Kristi Jean
General Electric Company
McClintic Shawn A.
Pham Long
Powell, III William E.
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