Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-07-25
2006-07-25
Wilson, Christian D. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S080000, C257S013000, C372S050121
Reexamination Certificate
active
07081643
ABSTRACT:
A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.
REFERENCES:
patent: 6330265 (2001-12-01), Kinoshita
patent: 6661828 (2003-12-01), Funabashi et al.
patent: 6885686 (2005-04-01), Botez
Hwang Seong-Taek
Kang Jung-Koo
Lee Jeong-Seok
Cha & Reiter LLC
Menz Douglas M.
Samsumg Electronics Co., Ltd.
Wilson Christian D.
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