Gallium nitride based light-emitting device

Details Gallium nitride based light-emitting device Gallium nitride based light-emitting device

2008-03-18

2008-03-18

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S098000, C257S103000, C257SE33034, C257SE33069

Reexamination Certificate

active

07345315

ABSTRACT:
A manufacturing method and a thus produced light-emitting structure for a white colored light-emitting device (LED) and the LED itself are disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode and a p-type metal electrode.

REFERENCES:
patent: 7067846 (2006-06-01), Takahashi et al.
patent: 2002/0117672 (2002-08-01), Chu et al.
patent: 2004/0238832 (2004-12-01), Takahashi et al.

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