Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-06-16
1999-05-18
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 99, 257 76, 257 98, 257103, 372 45, H01L33/00;23/13
Patent
active
059052759
ABSTRACT:
A gallium nitride compound semiconductor light-emitting device uses a sapphire substrate as a support and has n- and p-type electrodes on the top and bottom surfaces. A trench is formed in the sapphire substrate. This trench has two side wall surfaces which extend from the top surface to the bottom surface and so incline as to converge downward. A buffer layer is formed on the sapphire substrate. A gallium nitride compound semiconductor multiple layer having an n-type layer and a p-type layer are formed on the buffer layer. This semiconductor multiple layer has two side portions arranged along the two side wall surfaces of the trench and a central portion positioned between these two side portions and formed integrally with the two side portions. N- and p-type electrodes are so formed as to oppose each other on the two sides of the central portion of the semiconductor multiple layer.
REFERENCES:
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4408217 (1983-10-01), Kobayashi et al.
patent: 4608581 (1986-08-01), Bagratishvili et al.
Nunoue Shin-ya
Yamamoto Masahiro
Guay John
Kabushiki Kaisha Toshiba
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