Gallium nitride compound-based semiconductor light emitting devi

Details Gallium nitride compound-based semiconductor light emitting devi Gallium nitride compound-based semiconductor light emitting devi

1998-04-30

2000-04-18

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

372 45, H01L 3300

Patent

active

060518472

ABSTRACT:
In the present invention, by organometallic vapor deposition, a buffer layer containing indium is grown on a substrate and an n-type gallium nitride compound-based semiconductor thin film containing indium is grown on the buffer layer. Thus, the occurrence of distortion and crystal defects in the vicinity of the boundary surface between the buffer layer and the n-type gallium nitride compound-based semiconductor thin film is reduced, so that the gallium nitride compound-based semiconductor thin film having an excellent crystallinity can be obtained.
As a gallium nitride compound-based semiconductor light emitting device using gallium nitride compound-based semiconductor thin films which has excellent light-emitting properties, there can be obtained a gallium nitride compound-based semiconductor light emitting device comprising a substrate, a buffer layer of Al.sub.1-x In.sub.x N (0<.times.<1) formed on the substrate, an n-type gallium nitride compound-based semiconductor thin film formed on the buffer layer, and a p-type gallium nitride compound-based semiconductor thin film formed on the n-type gallium nitride compound-based semiconductor thin film, wherein the buffer layer and the gallium nitride compound-based semiconductor thin films have an improved flatness.

REFERENCES:
patent: 5689123 (1997-11-01), Major et al.
patent: 5729029 (1998-03-01), Rudaz
patent: 5786603 (1998-07-01), Rennie et al.
patent: 5838706 (1998-11-01), Edmond et al.

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