Use of atomic oxygen process for improved barrier layer
Use of dilute steam ambient for improvement of flash devices
Use of dilute steam ambient for improvement of flash devices
Use of gate electrode workfunction to improve DRAM refresh
Use of high-K dielectric material for ONO and tunnel oxide...
Use of high-K dielectric material in modified ONO structure...
Use of high-k dielectric materials in modified ONO structure...
Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch r
Use of membrane properties to reduce residual stress in an...
Use of nitric oxide surface anneal to provide reaction...
Use of spacers as floating gates in EEPROM with doubled storage
Use of voids between elements in semiconductor structures...
Using a change in doping of poly gate to permit placing both...
Using epitaxially grown wells for reducing junction...
Using high-k dielectrics in isolation structures method,...
Using metal/metal nitride bilayers as gate electrodes in...
Using metal/metal nitride bilayers as gate electrodes in...
Using oxynitride spacer to reduce parasitic capacitance in...
UV-blocking layer for reducing UV-induced charging of SONOS...
UV-programmable P-type mask ROM