Use of voids between elements in semiconductor structures...

Details Use of voids between elements in semiconductor structures... Use of voids between elements in semiconductor structures...

2006-05-16

2006-05-16

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S317000, C257S318000

Reexamination Certificate

active

07045849

ABSTRACT:
A flash EEPROM or other type of memory cell array having adjacent charge storage elements is formed with a gas filled void between them in order to reduce the level of capacitive coupling between storage elements, thus reducing cross-coupling between charge storage elements and resulting errors occurring in the data read from the array.

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