Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S371000, C257SE27046, C257SE27060, C438S154000
Reexamination Certificate
active
07999323
ABSTRACT:
The present invention is directed to CMOS structures that include at least one nMOS device located on one region of a semiconductor substrate; and at least one pMOS device located on another region of the semiconductor substrate. In accordance with the present invention, the at least one nMOS device includes a gate stack comprising a gate dielectric, a low workfunction elemental metal having a workfunction of less than 4.2 eV, an in-situ metallic capping layer, and a polysilicon encapsulation layer and the at least one pMOS includes a gate stack comprising a gate dielectric, a high workfunction elemental metal having a workfunction of greater than 4.9 eV, a metallic capping layer, and a polysilicon encapsulation layer. The present invention also provides methods of fabricating such a CMOS structure.
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Cartier Eduard A.
Copel Matthew W.
Doris Bruce B.
Hon Wong Keith Kwong
Jammy Rajarao
International Business Machines - Corporation
Lin John
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
Warren Matthew E
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