Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-09-11
2010-02-23
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21626
Reexamination Certificate
active
07667275
ABSTRACT:
A complementary metal oxide semiconductor (CMOS) device has a substrate100, a gate structure108disposed atop the substrate, and spacers250, deposited on opposite sides of the gate structure108to govern formation of deep source drain regions S, D in the substrate. Spacers250are formed of an oxynitride (SiOxNyCz) wherein x and y are non-zero but z may be zero or greater; such oxynitride spacers reduce parasitic capacitance, thus improving device performance. A method of fabricating a portion of a complementary metal oxide semiconductor (CMOS) device involves providing a substrate100, forming a gate structure108over the substrate, depositing a first layer104atop the substrate on opposite sides of the gate structure to govern formation of deep source drain regions in the substrate, depositing an oxynitride (SiOxNyCz) layer250atop the first layer (in which x and y are non-zero but z may be zero or greater), depositing a second layer112atop the oxynitride layer, and depositing a nitride layer114B atop the second layer.
REFERENCES:
patent: 6677201 (2004-01-01), Bu et al.
patent: 6743705 (2004-06-01), Mehrotra et al.
patent: 2002/0055230 (2002-05-01), Chang
patent: 2002/0140100 (2002-10-01), Yokoyama
patent: 2002/0182795 (2002-12-01), Bae et al.
patent: 2003/0085436 (2003-05-01), Moore
Bu Haowen
Chen Yuanning
Liu Kaiping
Brady III Wade J.
Keagy Rose Alyssa
Movva Amar
Smith Bradley K
Telecky , Jr. Frederick J.
LandOfFree
Using oxynitride spacer to reduce parasitic capacitance in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Using oxynitride spacer to reduce parasitic capacitance in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Using oxynitride spacer to reduce parasitic capacitance in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4190660