Using metal/metal nitride bilayers as gate electrodes in...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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C257S371000, C257SE27046, C438S154000

Reexamination Certificate

active

07598545

ABSTRACT:
The present invention is directed to CMOS structures that include at least one nMOS device located on one region of a semiconductor substrate; and at least one pMOS device located on another region of the semiconductor substrate. In accordance with the present invention, the at least one nMOS device includes a gate stack comprising a gate dielectric, a low workfunction elemental metal having a workfunction of less than 4.2 eV, an in-situ metallic capping layer, and a polysilicon encapsulation layer and the at least one pMOS includes a gate stack comprising a gate dielectric, a high workfunction elemental metal having a workfunction of greater than 4.9 eV, a metallic capping layer, and a polysilicon encapsulation layer. The present invention also provides methods of fabricating such a CMOS structure.

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Kim, et al. “Engineering Chemically Abrupt High-K Metal Oxide/Silicon Interfaces Using An Oxygen-Gettering Metal Overlayer” Journal of Applied Physics, vol. 96, No. 6, pp. 3467-3472, Sep. 2004.

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