Implanted vertical source-line under straight stack for...
Implanting carbon to form P-type source drain extensions
Improved vertical channel transistor
In service programmable logic arrays with low tunnel barrier...
In situ reactive layers for protection of ferroelectric integrat
In-situ silicon nitride and silicon based oxide deposition...
Incorporating barrier atoms into a gate dielectric using gas clu
Incorporation of nitrogen into high k dielectric film
Increase in deep trench capacitance by a central ground...
Increase resistance of a polysilicon load resistor, in an SRAM c
Increased capacitance trench capacitor
Increased cycle specification for floating-gate and method...
Increased gate to body coupling and application to dram and...
Increased interior volume for integrated memory cell
Increased reliability for a contact structure to connect an...
Increased-density flash EPROM that requires less area to form th
Increasing carrier mobility in NFET and PFET transistors on...
Increasing pixel conversion gain in CMOS image sensors
Increasing switching speed of geometric construction gate...
Independent n-tips for multi-gate transistors