Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-29
2008-07-29
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29162
Reexamination Certificate
active
07405453
ABSTRACT:
A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.
REFERENCES:
patent: 2394930 (1946-02-01), McRae
patent: 3895127 (1975-07-01), Comizzoli
patent: 4056642 (1977-11-01), Saxena et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4292343 (1981-09-01), Plaettner et al.
patent: 4343830 (1982-08-01), Sarma et al.
patent: 4436761 (1984-03-01), Hayashi et al.
patent: 4544571 (1985-10-01), Miller
patent: 4645683 (1987-02-01), Gourrier et al.
patent: 4747367 (1988-05-01), Posa
patent: 4766006 (1988-08-01), Gaczi
patent: 4795512 (1989-01-01), Nakatani et al.
patent: 4992306 (1991-02-01), Hochberg et al.
patent: 5135775 (1992-08-01), Foller et al.
patent: 5250456 (1993-10-01), Bryant
patent: 5281546 (1994-01-01), Possin et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5369297 (1994-11-01), Kusunoki et al.
patent: 5449314 (1995-09-01), Meikle et al.
patent: 5541436 (1996-07-01), Kwong et al.
patent: 5554876 (1996-09-01), Kusunoki et al.
patent: 5576071 (1996-11-01), Sandhu
patent: 5576222 (1996-11-01), Arai et al.
patent: 5587205 (1996-12-01), Saito et al.
patent: 5726087 (1998-03-01), Tseng et al.
patent: 5780115 (1998-07-01), Park et al.
patent: 5795495 (1998-08-01), Meikle
patent: 5891798 (1999-04-01), Doyle et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5937303 (1999-08-01), Gardner et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 5950107 (1999-09-01), Huff et al.
patent: 5961791 (1999-10-01), Frisa et al.
patent: 5990013 (1999-11-01), Berenguer et al.
patent: 5993916 (1999-11-01), Zhao et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6020260 (2000-02-01), Gardner
patent: 6033998 (2000-03-01), Aronowitz et al.
patent: 6063666 (2000-05-01), Chang et al.
patent: 6087229 (2000-07-01), Aronowitz et al.
patent: 6090217 (2000-07-01), Kittle
patent: 6100559 (2000-08-01), Park
patent: 6107192 (2000-08-01), Subrahmanyan et al.
patent: 6127284 (2000-10-01), Gardner et al.
patent: 6162684 (2000-12-01), Chang et al.
patent: 6174799 (2001-01-01), Lopatin et al.
patent: 6180543 (2001-01-01), Yu et al.
patent: 6184110 (2001-02-01), Ono et al.
patent: 6200866 (2001-03-01), Ma et al.
patent: 6204182 (2001-03-01), Truninger et al.
patent: 6207587 (2001-03-01), Li et al.
patent: 6245689 (2001-06-01), Hao et al.
patent: 6271127 (2001-08-01), Liu et al.
patent: 6291867 (2001-09-01), Wallace et al.
patent: 6294836 (2001-09-01), Paranjpe et al.
patent: 6296715 (2001-10-01), Kittle
patent: 6306758 (2001-10-01), Park
patent: 6329704 (2001-12-01), Akatsu et al.
patent: 6362526 (2002-03-01), Pramanick et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6368961 (2002-04-01), Lopatin et al.
patent: 6399522 (2002-06-01), Tsan et al.
patent: 6436848 (2002-08-01), Ramkumar
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6576967 (2003-06-01), Schaeffer et al.
patent: 6657284 (2003-12-01), Li et al.
patent: 6696733 (2004-02-01), Koike et al.
patent: 6703708 (2004-03-01), Werkhoven et al.
patent: 6803635 (2004-10-01), Koyama et al.
patent: 6846751 (2005-01-01), Ahn et al.
patent: 2001/0015737 (2001-08-01), Truninger et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2002/0006468 (2002-01-01), Paranjpe et al.
patent: 2002/0102838 (2002-08-01), Paranjpe et al.
patent: 0 617 461 (1994-09-01), None
patent: 2372042 (2002-08-01), None
patent: 60 254621 (1985-12-01), None
patent: 411121453 (1999-04-01), None
patent: 02000208510 (2000-07-01), None
patent: 2000 160342 (2000-10-01), None
patent: WO 00/54320 (2000-09-01), None
patent: WO 00/61833 (2000-10-01), None
Abeles, et al.,Amorphous Semiconductor Superlattices,Physical Review Letters, vol. 51, No. 21, pp. 2003-2006 (1993).
Atomic Layer Deposition Targets Thin Films, Wafer Processing,Semiconductor International, Sep. 1999.
Bai,High K Gate Stack for Sub-0.1 UM CMOS Technology,Electrochemical Society Proceedings, vol. 99-100, pp. 39-44 (1999).
Del Prado, et al.,Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature,Thin Solid Films, vol. 344, pp. 437-440 (1999).
Desu, et al,Enhanced Dielectric Properties of Modified Ta2O5Thin Films,Mat Res. Innovat (1999) 2:299-302.
Guo et al.,Tunneling leakage current in oxynitride dependence on oxygen
itrogen content,IEEE Electron device letters, vol. 19, Jun. 1998, pp. 207-209.
Hiltunen, et al.,Nitrades of Titanium, Niobium, Tantalum and Molybdenum Grown as Thin Films by the Atomic Layer Epitaxy Method,Thin Solid Films, 166 (1988) pp. 149-154.
Kaizuka, et al.,Conformal Chemical Vapor Deposition TiN(111)Film Formation as an Underlayer of Al for Highly Reliable Interconnects,jpn. J. Appl. Phys. vol. 33 (1994) pp. 470-474.
Kikkawa, et al.,A Quarter-Micrometer Interconnection Technology Using a TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti Multilayer Structure,IEEE Transactions on Electron Devices, vol. 40, No. 2 Feb. 1993.
Kikkawa, et al.,Al-Si-Cu/TiN Multilayer Interconnection and Al-Ge Reflow Sputtering Technologies for Quarter-Micron Devices,54/SPIE vol. 1805 Submicrometer Metallization (1992).
Kim, H. and R. Reif, In-situlow-temperature(600° C)wafer surface cleaning by electron cyclotron resonance hydrogen plasma . . . ,Thin Solid Films, vol. 289:192-198 (1996).
Klaus et al.,Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions,Applied Surface Science, vol. 162-163, pp. 479-491 (2000).
Lee et al., JP 2000058777 (English Abstract).
Lee et al.,The high resistivity properties of tungsten nitride thin films deposited by rf&dc sputtering,Proceedings of the 5thIntern. Conference on Properties and Applications of Dielectric Materials, May 1997, pp. 674-676.
Leskelä, et al.,Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films,Journal De Physique IV, Colloque C5, Supplement au Journal de Physique II, Vol. 5, jiun 1995.
Lucovsky,Integration of Alternative High-K Gate Dielectrics into Aggressively Scaled CMOS Si Devices: Chemical Bonding Constraints at Si-Dielectric Interfaces, Electrochemical Society Proceedings, vol. 99-10, pp. 69-80 (1999).
Maiti, et al.,Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process, Applied Physics Letter, vol. 61, No. 15, pp. 1790-1792 (1992).
Martensson, et al.,Use of Atomic Layer Expitaxy for Fabrication of Si/TiN/Cu Structures,J.Vac Sci. Technol.B 17(5), Sep./Oct. 1999, pp. 2122-2128.
Min, et al.,Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis(ethylmethylamino)- Titatium and Ammonia,Jpn. J. Appl. Phys. vol. 37 (1998) pp. 4999-5004.
Min, et al.,Atomic Layer Deposition of TiN Thin Films by Sequential Infroduction of Ti precursor and NH3,Mat. Res. Soc. Symp. Proc. vol. 514 1998 Materials Research Society.
Nakajima, et al.,Atomic-layer-deposited silicon-nitride/SiO2stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor filed-effect transistors,Applied Physics Letters, vol. 77, No. 18, pp. 2855-2857 (2000).
Nakajima, et al.,Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition, Applied Physics Letters, vol. 79, No. 5, pp. 665-667 (2001).
Ramm J. and E. Beck,Low temperature epitaxial growth by molecular beam epitaxy on hydrogen-plasma-cleaned silicon wafers,Thin Solid Films, vol. 246:158-163 (1994).
Ritala, et al,Perfectly Conformal TiN and Al2O3Films Deposited by Atomic Layer Deposition,Communications, Chemical Vapor Deposition 1999, 5, No. 1, pp. 7-9.
Ritala, e
Pomarede Christophe
Shero Eric J.
ASM America Inc.
Knobbe Martens Olson & Bear LLP
Zarneke David A
LandOfFree
Incorporation of nitrogen into high k dielectric film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Incorporation of nitrogen into high k dielectric film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Incorporation of nitrogen into high k dielectric film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2814161