Improved vertical channel transistor

Details Improved vertical channel transistor Improved vertical channel transistor

1991-07-18

1994-04-12

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257344, 257400, H01L 2968

Patent

active

053028430

ABSTRACT:
A field effect transistor is formed on a side surface of an elevation protruded from the upper surface of a substrate. A gate electrode is formed on the side surface with a gate insulating film therebetween. Source and drain regions are formed in the top of the elevation and the surface of the substrate adjacent to the elevation by ion implantation with the gate electrodes as a mask.

REFERENCES:
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patent: 4649406 (1987-03-01), Takemae et al.
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patent: 4845539 (1989-07-01), Inoue
patent: 4937641 (1990-06-01), Sunami et al.
patent: 5047812 (1991-09-01), Pfiester
patent: 5136534 (1992-08-01), McDavid et al.
patent: 5181088 (1993-01-01), Mikata et al.
Mizuno et al., "High Speed and Highly Reliable Trench MOSFET with Dual Gate", Symp. VLSI Tech. Dig. (1988), pp. 23-24.
IEDM 11-14 Dec. 1988, pp. 222-225, San Francisco, Calif., U.S.; H. Takato et al.; "High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs".

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