Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-05-31
1998-06-02
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257297, 257506, H01L 2976, H01L 27108
Patent
active
057604339
ABSTRACT:
A layer of sacrificial, chemically reactive material is formed as part of the fabrication process of an integrated circuit, and covers active circuitry to protect it from reaction with hydrogen. Integrated circuits and fabrication methods are provided by the present invention. The present invention is used to fabricate integrated circuits such as ferroelectric memories, and the like, using die or substrates containing one or more sacrificial layers of strontium bismuth niobate tantalate, for example. The sacrificial layers consume atmospheric hydrogen or other materials that otherwise would react with active circuitry of the integrated circuits and render them ineffective.
REFERENCES:
patent: 4149301 (1979-04-01), Cook
patent: 5371699 (1994-12-01), Larson
Ramer O. Glenn
Rosser Robin W.
Abraham Fetsum
Denson-Low W. K.
Hughes Electronics
Lachman M. E.
Sales M. W.
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