Increased reliability for a contact structure to connect an...

Details Increased reliability for a contact structure to connect an... Increased reliability for a contact structure to connect an...

2011-03-15

2011-03-15

Arora, Ajay K (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S367000, C257S380000, C257SE29156, C438S199000

Reexamination Certificate

active

07906815

ABSTRACT:
By forming a direct contact structure connecting, for instance, a polysilicon line with an active region on the basis of an increased amount of metal silicide by removing the sidewall spacers prior to the silicidation process, a significantly increased etch selectivity may be achieved during the contact etch stop layer opening. Hence, undue etching of the highly doped silicon material of the active region would be suppressed. Additionally or alternatively, an appropriately designed test structure is disclosed, which may enable the detection of electrical characteristics of contact structures formed in accordance with a specified manufacturing sequence and on the basis of specific design criteria.

REFERENCES:
patent: 5427964 (1995-06-01), Kaneshiro et al.
patent: 6081016 (2000-06-01), Tanaka et al.
patent: 6083847 (2000-07-01), Kuo
patent: 6468899 (2002-10-01), Choi
patent: 102005063092 (2007-07-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 046 843.3 dated May 14, 2009.

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